© 2004 Fairchild Semiconductor Corporation

www.fairchildsemi.com

MMBT5401 Rev. 1.1.0

2

Thermal Characteristics(3)

Values are at TA = 25°C unless otherwise noted.

Note:

3. PCB size: FR-4, 76 mm x 114 mm x 1.57 mm (3.0 inch x 4.5 inch x 0.062 inch) with minimum land pattern size.

Electrical Characteristics

Values are at TA = 25°C unless otherwise noted.

Note:

4. Pulse test: Pulse width

≤ 300 μs, duty cycle ≤ 2%

Symbol

Parameter

Max.

Unit

PD

Total Device Dissipation

350

mW

Derate Above 25

°C2.8

mW/

°C

RθJA

Thermal Resistance, Junction-to-Ambient

357

°C/W

Symbol

Parameter

Conditions

Min.

Max.

Unit

BVCEO

Collector-Emitter Breakdown Voltage(4) IC = -1.0 mA, IB = 0

-150

V

BVCBO

Collector-Base Breakdown Voltage

IC = -100 μA, IE = 0

-160

V

BVEBO

Emitter-Base Breakdown Voltage

IE = -10 μA, IC = 0

-5.0

V

ICBO

Collector Cut-Off Current

VCB = -120 V, IE = 0

-50

nA

VCB = -120 V, IE = 0,

TA = 100°C

-50

μA

IEBO

Emitter Cut-Off Current

VEB = -3.0 V, IC = 0

-50

nA

hFE

DC Current Gain(4)

IC = -0.1 mA, VCE = -5.0 V

50

IC = -10 mA, VCE = -5.0 V

60

240

IC = -50 mA, VCE = -5.0 V

50

VCE(sat)

Collector-Emitter Saturation Voltage(4)

IC = -10 mA, IB = -1.0 mA

-0.2

V

IC = -50 mA, IB = -5.0 mA

-0.5

VBE(sat)

Base-Emitter Saturation Voltage(4)

IC = -10 mA, IB = -1.0 mA

-1.0

V

IC = -50 mA, IB = -5.0 mA

-1.0

fT

Current Gain Bandwidth Product

IC = -10 mA, VCE = -10 V,

f = 100 MHz

100

300

MHz

Cob

Output Capacitance

VCB = -10 V, IE = 0,

f = 1 MHz

6.0

pF

NF

Noise Figure

IC = -250 μA, VCE = -5.0 V,

RS = 1.0 kΩ,

f = 10 Hz to 15.7 kHz

8.0

dB