2N5884 datasheet(1/4 Pages) STMICROELECTRONICS

No. de pieza	2N5884

Descripción Electrónicos	COMPLEMENTARY SILICON HIGH POWER TRANSISTORS

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2N5884

2N5886

COMPLEMENTARY SILICON

HIGH POWER TRANSISTORS

s

SGS-THOMSON PREFERRED SALESTYPES

s

COMPLEMENTARY PNP - NPN DEVICES

s

HIGH CURRENT CAPABILITY

APPLICATIONS

s

GENERAL PURPOSE SWITCHING AND

AMPLIFIER

s

LINEAR AND SWITCHING INDUSTRIAL

EQUIPMENT

DESCRIPTION

The 2N5884 and 2N5886 are complementary

silicon power transistor in Jedec TO-3 metal case

inteded for use in power linear amplifiers and

switching applications.

INTERNAL SCHEMATIC DIAGRAM

June 1997

1

2

TO-3

ABSOLUTE MAXIMUM RATINGS

Symbol

Parameter

Value

Unit

PNP

2N5884

NPN

2N5886

VCBO

Collector-Base Voltage (IE = 0)

80

V

VCEO

Collector-Emitter Voltage (IB = 0)

80

V

VEBO

Emitter-Base Voltage (IC = 0)

5

V

IC

Collector Current

25

A

ICM

Collector Peak Current

50

A

IB

Base Current

7.5

A

Ptot

Total Dissipation at Tc

≤ 25 oC

200

W

Tstg

Storage Temperature

-65 to 200

oC

Tj

Max. Operating Junction Temperature

200

oC

For PNP types voltage and current values are negative.

1/4

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