BAS85 datasheet(4/9 Pages) NXP

No. de pieza	BAS85

Descripción Electrónicos	Schottky barrier diode

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Fabricante Electrónico	NXP [NXP Semiconductors]

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4 / 9 page

BAS85_5

Product data sheet

Rev. 05 — 25 March 2009

4 of 9

NXP Semiconductors

BAS85

Schottky barrier diode

FR4 PCB, standard footprint

(1) Tamb = 125 °C

(2) Tamb =85 °C

(3) Tamb =25 °C

Fig 1.

Average forward current as a function of

ambient temperature; derating curve

Fig 2.

Forward current as a function of forward

voltage; typical values

(1) Tamb =85 °C

(2) Tamb =25 °C

(3) Tamb = −40 °C

f = 1 MHz; Tamb =25 °C

Fig 3.

Reverse current as a function of reverse

voltage; typical values

Fig 4.

Diode capacitance as a function of reverse

voltage; typical values

100

150

200

250

100

150

IF(AV)

(mA)

Tamb (°C)

mra540

1.2

0.8

0.4

VF (V)

(mA)

103

102

10−1

mld358

(1) (2) (3)

(1)

(2) (3)

mgc682

105

(nA)

104

103

102

10−1

VR (V)

(1)

(2)

(3)

010

VR (V)

(pF)

mgc681

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