2N2219A datasheet(2/8 Pages) STMICROELECTRONICS

2 / 8 page

THERMAL DATA

TO-39

T O-18

Rthj-case

Rthj-amb

Thermal Resistance Junction-Case

Max

Thermal Resistance Junction-Ambient

Max

187.5

83.3

300

oC/W

ELECTRICAL CHARACTERISTICS (Tcase =25

oC unless otherwise specified)

Symbo l

Parameter

Test Con ditions

Min.

Typ.

Max.

Unit

ICBO

Collector Cut-of f

Current (IE =0)

VCB =60 V

Tcase = 150

µA

ICEX

Collector Cut-of f

Current (VBE =-3V)

VCE = 60 V

IBEX

Base Cut -off Current

(VBE =-3V)

VCE = 60 V

IEBO

Emitter Cut-of f Current

(IC =0)

VEB =3 V

V(BR)CBO

∗ Collector-Base

Breakdown Voltage

(IE =0)

IC =10

µA75

V(BR)CEO

∗ Collector-Emitter

Breakdown Voltage

(IB =0)

IC =10 mA

V(BR)EBO

∗ Emitter-Base

Breakdown Voltage

(IC =0)

IE =10

µA6

VCE(sat)

∗ Collector-Emitter

Sat uration Voltage

IC = 150 mA

IB =15 mA

IC = 500 mA

IB =50 mA

0. 3

VBE(sat)

∗ Base-Emitter

Sat uration Voltage

IC = 150 mA

IB =15 mA

IC = 500 mA

IB =50 mA

0. 6

1. 2

hFE

∗

DC Current G ain

IC =0.1 mA

VCE =10 V

IC =1 mA

VCE =10 V

IC =10 mA

VCE =10 V

IC = 150 mA

VCE =10 V

IC = 500 mA

VCE =10 V

IC = 150 mA

VCE =1 V

IC =10 mA

VCE =10 V

Tamb =-55

100

300

hfe

∗

SmallSignalCurrent

Gain

IC =1 mA

VCE =10 V

f = 1KHz

IC =10 mA

VCE =10 V

f = 1KHz

300

375

Transition Frequency

IC =20 mA

VCE =20 V

f= 100 MHz

300

MHz

CEBO

Emitter Base

Capacitance

IC =0

VEB =0.5 V

f =100KHz

CCBO

Collector Base

Capacitance

IE =0

VCB =10 V

f = 100 KHz

Re (hie)

Real Part of Input

Impedance

IC =20 mA

VCE =20 V

f = 300MHz

Ω

∗ Pulsed: Pulse duration = 300 µs, duty cycle ≤ 1%

2N2219A/2N2222A

2/8

2N2219A Datasheet(PDF) 2 Page - STMicroelectronics

2N2219A Datasheet(HTML) 2 Page - STMicroelectronics

Html Pages

1 2 3 4 5 6 7 8

Datasheet Descarga

Enlace URL