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TLN201 Datasheet(PDF) 2 Page - Toshiba Semiconductor

No. de pieza TLN201
Descripción Electrónicos  Infrared LED GaA?밃s Infrared Emitter
PDF  5 Pages
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Fabricante Electrónico  TOSHIBA [Toshiba Semiconductor]
Página de inicio  http://www.semicon.toshiba.co.jp/eng
Logo TOSHIBA - Toshiba Semiconductor

TLN201 Datasheet(HTML) 2 Page - Toshiba Semiconductor

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TLN201(F)
2007-10-01
2
Optical And Electrical Characteristics (Ta = 25°C)
Characteristic
Symbol
Test Condition
Min
Typ.
Max
Unit
Forward voltage
VF
IF = 50mA
―
1.5
1.9
V
Pulse forward voltage
VFP
IFP = 1A
―
5.0
―
V
Reverse current
IR
VR = 5V
―
―
10
μA
Radiant intensity
IE
IF = 50mA
20
35
―
mW / sr
Radiant power
PO
IF = 50mA
―
5
―
mW
Capacitance
CT
VR = 0, f = 1MHz
―
17
―
pF
Peak emission wavelength
λP
IF = 50mA
―
880
―
nm
Spectral line half width
Δλ
IF = 50mA
―
80
―
nm
Half value angle
θ
2
1
IF = 50mA
―
±7
―
°
Precautions
Please be careful of the followings.
1. Soldering temperature : 260°C max
Soldering time : 5s max
(Soldering must be performed 1.5m from the bottom of the package.)
2. When forming the leads, bend each lead under the 2mm from the body of the device.
Soldering must be performed after the leads have been formed.
3. Radiant intensity falls over time due to the current which flows in the infrared LED.
When designing a circuit, take into account this change in radiant power over time.
The ratio of fluctuation in radiation intensity to fluctuation in optical output is 1 : 1.
(0)
P
(t)
P
(0)
I
(t)
I
O
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