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IXGH60N60C2 Datasheet(PDF) 1 Page - Inchange Semiconductor Company Limited

No. de pieza IXGH60N60C2
Descripción Electrónicos  IGBT
PDF  2 Pages
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Fabricante Electrónico  ISC [Inchange Semiconductor Company Limited]
Página de inicio  http://www.iscsemi.cn
Logo ISC - Inchange Semiconductor Company Limited

IXGH60N60C2 Datasheet(HTML) 1 Page - Inchange Semiconductor Company Limited

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ISG2185
eq IXGH60N60C2
IGBT
www.iscsemi.com
1
DESCRIPTION
· Low Saturation Voltage:VCE(sat)=2.5V@IC=50A
· High Current Handling Capability
· High Input Impedance
APPLICATIONS
· Synchronous Rectification in SMPS
· Automotive Chargers
· UPS,PFC
· High Voltage Auxiliaries
ABSOLUTE MAXIMUM RATINGS
SYMBOL
PARAMETER
VALUE
UNIT
VCES
Collector-Emitter Voltage
600
V
VGES
Gate-Emitter Voltage
±
20
V
IC
Collector Current-Continuous
@ TC=25℃
75
A
IC
Collector Current-Continuous
@ TC=110℃
60
A
ICM
Pulsed Collector Current@ TC= 25℃
300
A
PD
Power Dissipation @TC=25℃
480
W
Tj
Operating Junction Temperature
-55~150
℃
Tstg
Storage Temperature Range
-55~150
℃
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
MAX
UNIT
Rth j-c
Thermal Resistance,Junction to Case
0.26
℃
/W


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