M48Z35AV datasheet(13/24 Pages) STMICROELECTRONICS

No. de pieza	M48Z35AV

Descripción Electrónicos	5.0V or 3.3V, 256Kbit (32Kbit x 8) ZEROPOWER® SRAM

PDF	24 Pages

Scroll/Zoom	100%

Fabricante Electrónico	STMICROELECTRONICS [STMicroelectronics]

Página de inicio	http://www.st.com

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13 / 24 page

M48Z35AV

Operating modes

13/24

2.4

VCC noise and negative going transients

ICC transients, including those produced by output switching, can produce voltage

fluctuations, resulting in spikes on the VCC bus. These transients can be reduced if

capacitors are used to store energy which stabilizes the VCC bus. The energy stored in the

bypass capacitors will be released as low going spikes are generated or energy will be

absorbed when overshoots occur. A ceramic bypass capacitor value of 0.1µF (see Figure 9)

is recommended in order to provide the needed filtering.

In addition to transients that are caused by normal SRAM operation, power cycling can

generate negative voltage spikes on VCC that drive it to values below VSS by as much as

one volt. These negative spikes can cause data corruption in the SRAM while in battery

backup mode. To protect from these voltage spikes, ST recommends connecting a schottky

diode from VCC to VSS (cathode connected to VCC, anode to VSS). (Schottky diode 1N5817

is recommended for through hole and MBRS120T3 is recommended for surface mount).

Figure 9.

Supply voltage protection

AI02169

VCC

0.1

μF

DEVICE

VCC

VSS

M48Z35AV Datasheet(PDF) 13 Page - STMicroelectronics