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GD2X75MPS17N Datasheet(PDF) 1 Page - Inchange Semiconductor Company Limited

No. de pieza GD2X75MPS17N
Descripción Electrónicos  SiC Schottky Diode
PDF  3 Pages
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Fabricante Electrónico  ISC [Inchange Semiconductor Company Limited]
Página de inicio  http://www.iscsemi.cn
Logo ISC - Inchange Semiconductor Company Limited

GD2X75MPS17N Datasheet(HTML) 1 Page - Inchange Semiconductor Company Limited

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ISCDM7047
eq GD2X75MPS17N
SiC Schottky Diode
www.iscsemi.com
1
DESCRIPTION
·
Enhanced Surge and Avalanche Robustness
·
Low Thermal Resistance
·
Low Reverse Leakage Current
APPLICATIONS
·
Solar Inverters
·
Motor Drives
·
High Frequency Rectifers
ABSOLUTE MAXIMUM RATINGS
SYMBOL
PARAMETER
VALUE
UNIT
VRRM
Peak Repetitive Reverse Voltage
1700
V
IF(AV)
Average Rectified Forward Current (per leg) /(per Device)
TC=127℃，D=1
75/150
A
IFSM
Non-Repetitive Peak Forward Surge Current,
Half SineWave (Per Leg)
750
A
IFRM
Repetitive Peak Forward Surge Current,
Half Sine Wave(Per Leg)
450
A
I2t
i2t Value (Per Leg)
2812
A2S
dv/dt
Diode Ruggedness (Per Leg)
200
V/ns
PD
Power Dissipation (Per Leg
556
W
TJ
Junction Temperature
-55~+175
℃
Tstg
Storage Temperature Range
-55~+175
℃
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
TYP.
UNIT
Rth j-c
Thermal Resistance,Junction to Case(Per Leg)
0.27
℃
/W


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