2SC2715 datasheet(2/8 Pages) TOSHIBA

No. de pieza	2SC2715

Descripción Electrónicos	Silicon NPN Epitaxial Planar Type (PCT process)

PDF	8 Pages

Scroll/Zoom	100%

Fabricante Electrónico	TOSHIBA [Toshiba Semiconductor]

Página de inicio	http://www.semicon.toshiba.co.jp/eng

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2 / 8 page

2SC2715

2007-11-01

y Parameter (typ.)

(1)

(common emitter f

= 455 kHz, Ta = 25°C)

Characteristics

Symbol

2SC2715-R

2SC2715-O

2SC2715-Y

Unit

Collector-emitter voltage

VCE

Emitter current

−1

Input conductance

gie

0.58

0.41

0.26

Input capacitance

Cie

Output conductance

goe

1.9

2.7

4.8

μS

Output capacitance

Coe

2.6

2.8

3.6

Forward transfer admittance

⎪yfe⎪

Phase angle of forward transfer

admittance

θfe

−0.79

−0.83

−0.92

Reverse transfer admittance

⎪yre⎪

5.7

6.2

μS

Phase angle of reverse transfer

admittance

θre

−90

(2)

(common emitter f

= 10.7 MHz, Ta = 25°C)

Characteristics

Symbol

2SC2715-R

2SC2715-O

2SC2715-Y

Unit

Collector-emitter voltage

VCE

Emitter current

−1

Input conductance

gie

1.04

0.85

0.65

Input capacitance

Cie

Output conductance

goe

μS

Output capacitance

Coe

2.7

2.9

3.6

Forward transfer admittance

⎪yfe⎪

Phase angle of forward transfer

admittance

θfe

−9.6

−10.4

−11.5

Reverse transfer admittance

⎪yre⎪

120

140

μS

Phase angle of reverse transfer

admittance

θre

−90

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