2SC4738

2007-11-01

1

TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process)

2SC4738

Audio Frequency General Purpose Amplifier Applications

= 0.95 (typ.)

• Complementary to 2SA1832

• Small package

Characteristics

Symbol

Rating

Unit

Collector-base voltage

60

V

Collector-emitter voltage

50

V

Emitter-base voltage

5

V

Collector current

150

mA

Base current

30

mA

Collector power dissipation

100

mW

Junction temperature

125

°C

Storage temperature range

−55~125

°C

Note: Using continuously under heavy loads (e.g. the application of high

temperature/current/voltage and the significant change in

temperature, etc.) may cause this product to decrease in the

reliability significantly even if the operating conditions (i.e.

operating temperature/current/voltage, etc.) are within the

absolute maximum ratings.

Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook

(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test

report and estimated failure rate, etc).

Characteristics

Symbol

Test Condition

Min

Typ.

Max

Unit

Collector cut-off current

⎯

⎯

0.1

μA

Emitter cut-off current

⎯

⎯

0.1

μA

DC current gain

(Note)

120

⎯

700

Collector-emitter saturation voltage

⎯

0.1

0.25

V

Transition frequency

80

⎯

⎯

MHz

Collector output capacitance

⎯

2.0

3.5

pF

( ) marking symbol

Marking

Unit: mm

JEDEC

―

JEITA

―

TOSHIBA

2-2H1A

Weight: 2.4 mg (typ.)