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GD50FSX65L2SF Datasheet(PDF) 1 Page - StarPower Europe AG |
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GD50FSX65L2SF Datasheet(HTML) 1 Page - StarPower Europe AG |
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1 / 9 page  GD50FSX65L2SF IGBT Module ©2018 STARPOWER Semiconductor Ltd. 12/29/2018 1/9 Preliminary STARPOWER SEMICONDUCTOR IGBT GD50FSX65L2SF 650V/50A 6 in one-package General Description STARPOWER IGBT Power Module provides ultra low conduction loss as well as short circuit ruggedness. They are designed for the applications such as general inverters and UPS. Features Low VCE(sat) Trench IGBT technology 6 μs short circuit capability VCE(sat) with positive temperature coefficient Maximum junction temperature 175 oC Low inductance case Fast & soft reverse recovery anti-parallel FWD Isolated heatsink using DBC technology PressFIT contact technology Typical Applications Inverter for motor drive AC and DC servo drive amplifier Uninterruptible power supply Equivalent Circuit Schematic |
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