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STPSC606G Datasheet(PDF) 1 Page - Inchange Semiconductor Company Limited

No. de pieza STPSC606G
Descripción Electrónicos  SiC Schottky Diode
PDF  2 Pages
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Fabricante Electrónico  ISC [Inchange Semiconductor Company Limited]
Página de inicio  http://www.iscsemi.cn
Logo ISC - Inchange Semiconductor Company Limited

STPSC606G Datasheet(HTML) 1 Page - Inchange Semiconductor Company Limited

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ISCD7045
eq STPSC606G
SiC Schottky Diode
www.iscsemi.com
1
DESCRIPTION
·
Switching behavior independent oftemperature
·
Dedicated to PFC boost diode
APPLICATIONS
·
Antisaturation diode
·
Power factor correction (PFC)
·
Snubber/clamp diode
ABSOLUTE MAXIMUM RATINGS
SYMBOL
PARAMETER
VALUE
UNIT
VRRM
Peak Repetitive Reverse Voltage
600
V
IF(AV)
Average Rectified Forward Current
6
A
IFSM
Surge non repetitive forwardcurrent
tp = 10 ms sinusoidal, Tc = 25℃
27
A
IFRM
Repetitive peak forward current
δ
= 0.1, Tc = 110℃, Tj = 150℃
27
A
TJ
Junction Temperature
-40~+175
℃
Tstg
Storage Temperature Range
-55~+175
℃
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
VALUE
UNIT
Rth j-c
Thermal Resistance,Junction to Case
2.8
℃
/W
ELECTRICAL CHARACTERISTICS
SYMBOL
PARAMETER
CONDITIONS
MAX
UNIT
VF
Forward voltage drop
IF= 6A ;Tj=25℃
1.7
V
VF
Forward voltage drop
IF= 6A ;Tj=150℃
2.1
V
IR
Reverse leakagecurrent
VR= VRWM ;Tj=25℃
75
uA
IR
Reverse leakagecurrent
VR= VRWM ;Tj=150℃
750
uA


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