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CT60AM Datasheet(PDF) 1 Page - Powerex Power Semiconductors |
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CT60AM Datasheet(HTML) 1 Page - Powerex Power Semiconductors |
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1 / 2 page ![]() Sep. 2000 CT60AM-18F OUTLINE DRAWING Dimensions in mm TO-3PL MITSUBISHI Nch IGBT CT60AM-18F INSULATED GATE BIPOLAR TRANSISTOR APPLICATION Microwave oven, Electromagnetic cooking devices, Rice-cookers 900 ±25 ±30 60 120 40 180 –40 ~ +150 –40 ~ +150 VGE = 0V Collector-Emitter Voltage Gate-Emitter Voltage Peak Gate-Emitter Voltage Collector Current Collector Current (Pulse) Emitter Current Maximum Power Dissipation Junction Temperature Storage Temperature V V V A A A W °C °C VCES VGES VGEM IC ICM IE PC Tj Tstg Symbol MAXIMUM RATINGS (Tc = 25°C) Parameter Conditions Ratings Unit q VCES ............................................................................... 900V q IC ......................................................................................... 60A q Simple drive q Integrated Fast-recovery diode q Small tail loss q Low VCE Saturation Voltage 20MAX. 5 2 2 1 0.5 4.0 φ3.2 5.45 5.45 3 GATE COLLECTOR EMITTER COLLECTOR |
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