BAS40CDW datasheet(2/4 Pages) PANJIT

No. de pieza	BAS40CDW

Descripción Electrónicos	SURFACE MOUNT SCHOTTKY DIODE ARRAYS

PDF	4 Pages

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Fabricante Electrónico	PANJIT [Pan Jit International Inc.]

Página de inicio	http://www.panjit.com.tw

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2 / 4 page

www.panjit.com

8/10/2005

Page 2

ELECTRICAL CHARACTERISTICS (Per Diode)

Parameter

Symbol

Min

Units

Breakdown Voltage (Note 1)

Tj = 25°C Unless otherwise noted

Conditions

Typ

Max

VBR

Forward Voltage (Note 1)

V F

Reverse Leakage Current (Note 1)

I RR

V =

Total Capacitance

C T

0Vdc Bias, f =1 MHz

Reverse Recovery Time

(See Figure 1)

trr

I = 10mA, I = 10mA

R = 100 Ohms;

measured at I

= 1mA

10uA

1.0mA

10mA

25V

380

500

1.0

5.0

+1 0 V

50 Ω O u t put

Pu ls e

Ge n e r a t o r

50 Ω In p u t

Sa m p lin g

O scillo s co p e

DUT

82 0 Ω

2. 0 k Ω

0. 1 µ F

10 0 µ H

0. 1 µ F

+1 0 V

50 Ω O u t put

Pu ls e

Ge n e r a t o r

50 Ω In p u t

Sa m p lin g

O scillo s co p e

DUT

82 0 Ω

2. 0 k Ω

0. 1 µ F

10 0 µ H

0. 1 µ F

Notes: 1. A 2.0kΩ variable resistor adjusted for a forward current (IF) to 10mA

2. Input pulse is adjusted to IR(peak) is equal to 10mA

Figure 1. REVERSE RECOVERY TIME EQUIVALENT TEST CIRCUIT

Note 1. Short duration pulse to minimize self-heating effect

Rrec

BAS40TW/ADW/CDW/SDW/RDW

40mA

1000

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