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BCR16CS Datasheet(PDF) 3 Page - Powerex Power Semiconductors

No. de pieza BCR16CS
Descripción Electrónicos  MEDIUM POWER USE NON-INSULATED TYPE, PLANAR PASSIVATION TYPE
PDF  5 Pages
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Fabricante Electrónico  POWEREX [Powerex Power Semiconductors]
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BCR16CS Datasheet(HTML) 3 Page - Powerex Power Semiconductors

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Feb.1999
23
102
57 103
1.6
0
23
10–1
57 100 23 5 7 101 23 5 7 102
0.8
0.6
0.4
0.2
1.0
1.2
1.4
100
23
101
57 102 23 5 7 103 23 5 7 104
3
2
101
7
5
3
2
7
5
7
5
3
2
10–1
VGD = 0.2V
PGM = 5W
PG(AV) = 0.5W
VGM = 10V
VGT = 1.5V
IGM = 2A
IFGT I, IRGT I, IRGT III
101
103
7
5
3
2
–60
–20
20
102
7
5
3
2
60
100
140
4
4
–40
0
40
80
120
TYPICAL EXAMPLE
101
103
7
5
3
2
–60
–20
20
102
7
5
3
2
60
100
140
4
4
–40
0
40
80
120
IFGT I, IRGT I
IRGT III
TYPICAL EXAMPLE
40
30
15
10
5
35
25
20
0
20
0
24
8
6
1012141618
360°
CONDUCTION
RESISTIVE,
INDUCTIVE
LOADS
40
12
10
8
160
120
100
60
20
0
20
0
80
140
24
614 16 18
CURVES APPLY REGARDLESS
OF CONDUCTION ANGLE
360°
CONDUCTION
RESISTIVE,
INDUCTIVE
LOADS
MAXIMUM ON-STATE POWER
DISSIPATION
RMS ON-STATE CURRENT (A)
ALLOWABLE CASE TEMPERATURE
VS. RMS ON-STATE CURRENT
RMS ON-STATE CURRENT (A)
MAXIMUM TRANSIENT THERMAL
IMPEDANCE CHARACTERISTICS
(JUNCTION TO CASE)
CONDUCTION TIME
(CYCLES AT 60Hz)
GATE CURRENT (mA)
GATE TRIGGER CURRENT VS.
JUNCTION TEMPERATURE
JUNCTION TEMPERATURE (°C)
GATE TRIGGER VOLTAGE VS.
JUNCTION TEMPERATURE
JUNCTION TEMPERATURE (°C)
GATE CHARACTERISTICS
MITSUBISHI SEMICONDUCTOR
〈TRIAC〉
BCR16CS
MEDIUM POWER USE
NON-INSULATED TYPE, PLANAR PASSIVATION TYPE



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