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BCR08AS Datasheet(PDF) 4 Page - Powerex Power Semiconductors

No. de pieza BCR08AS
Descripción Electrónicos  LOW POWER USE NON-INSULATED TYPE, PLANAR PASSIVATION TYPE
PDF  5 Pages
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BCR08AS Datasheet(HTML) 4 Page - Powerex Power Semiconductors

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Mar. 2002
MITSUBISHI SEMICONDUCTOR
〈TRIAC〉
BCR08AS
LOW POWER USE
NON-INSULATED TYPE, PLANAR PASSIVATION TYPE
103
7
5
3
2
102
7
5
3
2
101
LACHING CURRENT VS.
JUNCTION TEMPERATURE
JUNCTION TEMPERATURE (
°C)
HOLDING CURRENT VS.
JUNCTION TEMPERATURE
JUNCTION TEMPERATURE (
°C)
REPETITIVE PEAK OFF-STATE
CURRENT VS. JUNCTION
TEMPERATURE
JUNCTION TEMPERATURE (
°C)
BREAKOVER VOLTAGE VS.
JUNCTION TEMPERATURE
JUNCTION TEMPERATURE (
°C)
COMMUTATION CHARACTERISTICS
RATE OF DECAY OF ON-STATE
COMMUTATING CURRENT (A /ms)
BREAKOVER VOLTAGE VS.
RATE OF RISE OF
OFF-STATE VOLTAGE
RATE OF RISE OF OFF-STATE VOLTAGE (V/
µs)
160
100
80
40
20
0
140
40
–40
–60
–20 0
20
60 80
140
100 120
60
120
TYPICAL EXAMPLE
140
40
–40
–60
–20 0
20
60 80 100 120
105
7
5
3
2
104
7
5
3
2
103
7
5
3
2
102
TYPICAL EXAMPLE
140
40
–40
–60
–20 0
20
60 80 100 120
23
100
57 101 23 5 7 102 23 5 7 103
120
0
20
40
60
80
100
140
160
Tj = 125
°C
TYPICAL EXAMPLE
I QUADRANT
III QUADRANT
160
–40
0
40
80
120
102
7
5
3
2
101
7
5
3
2
100
7
5
3
2
10–1
T2
+, G–
TYPICAL EXAMPLE
TYPICAL
EXAMPLE
DISTRIBUTION
T2
+, G+
T2
– , G–
T2
– , G+
TYPICAL
EXAMPLE
Tj = 125
°C
IT = 1A
τ = 500µs
VD = 200V
f = 3Hz
I QUADRANT
III QUADRANT
MINIMUM
CHARAC-
TERISTICS
VALUE
TYPICAL EXAMPLE
10–1
23
5 7 100
100
7
5
3
2
23
5 7 101
101
7
5
3
2
10–1



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