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ARF648 Datasheet(PDF) 2 Page - Power Semiconductors |
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ARF648 Datasheet(HTML) 2 Page - Power Semiconductors |
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2 / 4 page ![]() ARF648 FAST RECOVERY DIODE FINAL SPECIFICATION feb 00 - ISSUE : 01 Distributed by FORWARD CHARACTERISTIC Tj = 150 °C 0 1000 2000 3000 4000 5000 6000 7000 8000 0,6 1,1 1,6 2,1 2,6 3,1 3,6 Forward Voltage [V] TRANSIENT THERMAL IMPEDANCE DOUBLE SIDE COOLED 0,0 2,0 4,0 6,0 8,0 10,0 12,0 14,0 16,0 0,001 0,01 0,1 1 10 100 t[s] SURGE CHARACTERISTIC Tj = 150 °C 0 5 10 15 20 25 30 35 1 10 100 n° cycles All the characteristics given in this data sheet are guaranteed only with uniform clamping force, cleaned and lubricated heatsink, surfaces with flatness < .03 mm and roughness < 2 µm. In the interest of product improvement ANSALDO reserves the right to change any data given in this data sheet at any time without previous notice. If not stated otherwise the maximum value of ratings (simbols over shaded background) and characteristics is reported. ANSALDO |
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