P2006AS datasheet(1/6 Pages) ADV

No. de pieza	P2006AS

Descripción Electrónicos	P-Channel Logic Level Enhancement Mode Field Effect Transistor

PDF	6 Pages

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Fabricante Electrónico	ADV [Advanced (Shenzhen) Electronics Co.,Ltd]

Página de inicio	http://www.advsemi.com/en/

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P2006AS

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Ver.0.10

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P-Channel Logic Level Enhancement Mode Field Effect Transistor

PRODUCT SUMMARY

Absolute Maximum Ratings ( TA = 25°C unless otherwise specified )

Symbol

Parameter

Ratings

Unit

Common Ratings

VDSS

Drain-Source Voltage

-20

V

VGSS

Gate-Source Voltage

±

12

TJ

Maximum Junction Temperature

155

°C

TSTG

Storage Temperature Range

-55 to 175

°C

IS

Diode Continuous Forward Current

TC=25°C

-35

A

Mounted on Large Heat Sink

IDM

300μs Pulse Drain Current Tested⑴

TC=25°C

-14

A

ID

Continuous Drain Current

TC=25°C

-35

A

PD

Maximum Power Dissipation

TC=25°C

3.0

W

Thermal Characteristics

Symbol

Parameter

Ratings

Unit

RthJC

Thermal resistance junction-case max

4.6

°C/W

RthJA

Thermal resistance junction-ambient max(PCB mounted ) ⑵

40

°C/W

1.

Pulse width limited by maximum junction temperature.

2.

1-in2

2oz Cu PCB board

VDSS

ID

RDS(ON) (mΩ)

-20V

-35A

6mΩ

SOP-8

S

G

D

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P2006AS Datasheet(PDF) 1 Page - Advanced (Shenzhen) Electronics Co.,Ltd

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