AMMC-5040 datasheet(2/10 Pages) AVAGO

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AMMC-5040 DC Specifications/Physical Properties[1]

Symbol

Parameters and Test Conditions

Units

Min.

Typ.

Max.

D1,2-3-4

Drain Supply Operating Voltage

4.5

First Stage Drain Supply Current (V

DD = 4.5 V, VG1 = -0.5 V)

D2-3-4

Total Drain Supply Current for Stages 2, 3 and 4 (V

DD = 4.5 V, VGG= -0.5 V)

225

G1,2-3-4

Gate Supply Operating Voltages (I

DD = 300 mA)

-0.45

Pinch-off Voltage (V

DD = 4.5 V, IDD < 10 mA)

-1.5

ch-b

Thermal Resistance[2] (Backside Temp. T

b = 25°C)

°C/W

Notes:

1. Measured in wafer form with T

chuck = 25°C (except θ ch-bs.)

2. Channel-to-backside Thermal Resistance (

ch-b) = 58°C/W at Tchannel (Tc) = 150°C as measured using the liquid crystal method. Thermal Resistance

at backside temperature (T

b) = 25°C calculated from measured data.

RF Specifications[3,4] (V

DD = 4.5V, IDD (Q) = 300 mA, Z0 = 50Ω)

Units

Broadband

Narrow Band Typical Performance

GHz

3–40

1–4

7–9

37–40

40–45

Symbol

Parameters and Test Conditions

Min.

Typ.

Typical

21|

Small-signal Gain

25.5

22.4

21.3

∆|S

21|

Small-signal Gain Flatness

±1.5

±0.2

±0.4

±0.2

±1.2

Input Return Loss

out

Output Return Loss

-1dB

Output Power @ 1 dB Gain Compression

dBm

19.5

22.5

f = 22 GHz

-3dB

Output Power @ 3 dB Gain Compression, f = 22 GHz dBm

21.6

23.5

22.5

21.5

OIP3

Output 3rd Order Intercept Point,

dBm

∆f = 2 MHz, P

in = -8 dBm, f = 22 GHz

12|

Isolation

Notes:

3. Data measured in wafer form, T

chuck = 25°C.

4. 100% on-wafer RF test is done at frequency = 24, 27, 29, 37 and 40 GHz, except as noted.

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