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2

isc Silicon NPN Power Transistor

2SC5881

ELECTRICAL CHARACTERISTICS

TC=25℃ unless otherwise specified

SYMBOL

PARAMETER

CONDITIONS

MIN

TYP.

MAX UNIT

VCEO

Collector-Emitter Breakdown Voltage IC= 1mA; IB= 0

60

-

-

V

VCBO

Collector-Base Breakdown Voltage

IC= 0.1mA; IB= 0

100

-

-

V

VEBO

Emitter-Base Breakdown Voltage

IC= 0.1mA; IB= 0

6.5

-

-

V

ICBO

Collector Cutoff Current

VCB= 40V; IE= 0

-

-

100

nA

IEBO

Emitter Cutoff Current

VEB= 4V; IC= 0

-

-

100

nA

VCE(sat)

Collector-Emitter Saturation Voltage

IC= 3A; IB= 0.3A

-

-

0.4

V

hFE

DC Current Gain

IC= 0.1A; VCE= 2V

120

-

390

-

hFE RANK

Q: 120−270 ; R: 180−390

NOTICE：

ISC reserves the rights to make changes of the content herein the datasheet at any time without

notification. The information contained herein is presented only as a guide for the applications of

our products.

ISC products are intended for usage in general electronic equipment. The products are not

designed for use in equipment which require specialized quality and/or reliability, or in equipment

which could have applications in hazardous environments, aerospace industry, or medical

field. Please contact us if you intend our products to be used in these special applications.

ISC makes no warranty or guarantee regarding the suitability of its products for any particular

purpose, nor does ISC assume any liability arising from the application or use of any products, and

specifically disclaims any and all liability, including without limitation special, consequential or

incidental damages.