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AMMC-6345 Datasheet(PDF) 2 Page - AVAGO TECHNOLOGIES LIMITED |
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AMMC-6345 Datasheet(HTML) 2 Page - AVAGO TECHNOLOGIES LIMITED |
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2 / 10 page ![]() 2 AMMC-6345 DC Specifications/Physical Properties [1] AMMC-6345 RF Specifications [3, 4, 5]( TA= 25°C,Vd=5V, Id(Q)=480 mA, Zo=50 Ω) Gain at 30 GHz P-1dB at 30 GHz Typical distribution of Small Signal Gain and Output Power @P-1dB. Based on 1500 part sampled over several produc- tion lots. Notes: 1. Ambient operational temperature TA=25°C unless otherwise noted. 2. Channel-to-backside Thermal Resistance ( θch-b) = 9.0°C/W at Tchannel (Tc) = 70°C as measured using infrared microscopy. Thermal Resistance at backside temperature (Tb) = 25°C calculated from measured data. Notes: 3. Small/Large -signal data measured in wafer form TA = 25°C. 4. 100% on-wafer RF test is done at frequency = 25, 30, and 38 GHz. Statistics based on 1500 part sample 5. Specifications are derived from measurements in a 50 Ω test environment. Aspects of the amplifier performance may be improved over a more narrow bandwidth by application of additional conjugate, linearity, or power matching. P-1dB at 38 GHz Symbol Parameters and Test Conditions Units Min. Typ. Max. Id Drain Supply Current (under any RF power drive and temperature) (Vd=5.0V, Vg set for Id typical) mA 480 600 Vg Gate Supply Operating Voltage Id(Q) = 480mA V -0.75 -0.55 -0.4 Vp Pinch-off voltage (Vdd=2.5V, Ids=20mA) V -2.5 -1.2 -0.9 θch-b Thermal Resistance [2] Backside temperature, Tb=25°C °C/W 8.2 Symbol Parameters and Test Conditions Units Minimum Typical Maximum Sigma Gain Small-signal Gain[4] dB 18 0.28 P-1dB Output Power at 1dB Gain Compression dBm 22.5 24 0.20 P-3dB Output Power at 3dB Gain Compression dBm 25 0.17 OIP3 Third Order Intercept Point; Df=100MHz; Pin=-20dBm dBm 32 0.8 RLin Input Return Loss[4] dB -17 0.92 RLout Output Return Loss[4] dB -13 0.63 Isolation Min. Reverse Isolation dB -40 1.30 LSL 18 19 20 LSL 22.6 22.7 22.8 22.9 23 23.1 23.2 23.3 23.4 LSL 23 24 |
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