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TMUX1574DYYR Datasheet(PDF) 19 Page - Texas Instruments

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No. de pieza TMUX1574DYYR
Descripción Electrónicos  TMUX1574 Low-Capacitance, 2:1 (SPDT) 4-Channel, Powered-Off Protected Switch with 1.8 V Logic
PDF  44 Pages
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Fabricante Electrónico  TI [Texas Instruments]
Página de inicio  http://www.ti.com
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TMUX1574DYYR Datasheet(HTML) 19 Page - Texas Instruments

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VDD
VDD
GND
1 MHz
Capacitance
Meter
Capacitance is measured at SX, DX,
and logic pins during ON and OFF
conditions
S1A
D1
S1B
S4A
D4
S4B
SEL
LOGIC CONTROL
EN
VOUT
Output
VS
0 V
VDD
QC = CL ×
VOUT
VEN
GND
OUTPUT
CL
D1
VDD
VDD
0.1 F
VOUT
VEN
VS
S1A
S1B
OUTPUT
CL
D4
VOUT
VS
S4A
S4B
EN
19
TMUX1574
www.ti.com
SCDS391C – OCTOBER 2018 – REVISED DECEMBER 2019
Product Folder Links: TMUX1574
Submit Documentation Feedback
Copyright © 2018–2019, Texas Instruments Incorporated
7.11 Charge Injection
The amount of charge injected into the source or drain of the device during the falling or rising edge of the gate
signal is known as charge injection, and is denoted by the symbol QC. Figure 37 shows the setup used to
measure charge injection from source (Sx) to drain (Dx).
Figure 37. Charge-Injection Measurement Setup
7.12 Capacitance
The parasitic capacitance of the device is captured at the source (Sx), drain (Dx), and select (SELx) pins. The
capacitance is measured in both the on and off state and is denoted by the symbol CON and COFF. Figure 38
shows the setup used to measure capacitance.
Figure 38. Capacitance Measurement Setup



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