PS21661-RZ datasheet(8/10 Pages) MITSUBISHI

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MITSUBISHI SEMICONDUCTOR <Single-In-Line Package Intelligent Power Module>

PS21661-RZ/FR

TRANSFER-MOLD TYPE

INSULATED TYPE

Mar. 2004

Error output Fo

Sense voltage of the

shunt resistance

SC reference voltage

CR circuit time constant

DELAY (Note)

Output current Ic

Lower-arms control input

Protection circuit state

Internal IGBT gate

RESET

SET

Fig. 8 TIMING CHARTS OF THE SIP-IPM PROTECTIVE FUNCTIONS

[A] Short-Circuit Protection (Lower-arms only)

a1. Normal operation : IGBT ON and carrying current.

a2. Short circuit current detection (SC trigger).

a3. Hard IGBT gate interrupt.

a4. IGBT turns OFF.

a5. FO output (20~80

µs).

a6. Input “L” : IGBT OFF state.

a7. Input “H” : IGBT ON state, but during the FO active signal the IGBT doesn’t turn ON.

a8. IGBT OFF state.

[B] Under-Voltage Protection (Lower-arms, UVD)

a1. Control supply voltage rises : After the voltage level reaches UVDr, the circuits start to operate when the next input is applied.

a2. Normal operation : IGBT ON and carrying current.

a3. Under voltage trip (UVDt).

a4. IGBT OFF in spite of control input condition.

a5. FO output (20~80

µs).

a6. Under voltage reset (UVDr).

a7. Normal operation : IGBT ON and carrying current.

Fault output Fo

Output current Ic

Control supply voltage VD

Protection circuit state

Control input

RESET

UVDBt

UVDBr

SET

Note : The CR time constant safe guards against erroneous SC signal resulting from di/dt generated voltages when IGBT turns ON. The opti-

mum setting for the CR circuit time constant is 1.5~2.0

µs.

PS21661-RZ Datasheet(PDF) 8 Page - Mitsubishi Electric Semiconductor

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