M69KB128AA datasheet(13/68 Pages) STMICROELECTRONICS

13 / 68 page

M69KB128AA

3 Power-up

13/68

Power-up

To guarantee correct operation, a specific Power-Up sequence must be followed to initialize the

M69KB128AA. Power must be applied simultaneously to VCC and VCCQ. Once VCC and VCCQ

have reached a stable level (see Figure 35: Deep Power-Down Entry and Exit AC Waveforms

and Figure 34: Power-Up AC Waveforms), the device will require tVCHEL to complete its self-

initialization process. During the initialization period, the E signal must remain High. Once

initialization has completed, the device is ready for normal operation.

Initialization will load the Bus Configuration Register (BCR) and the Refresh Configuration

and Table 11: Refresh Configuration Register Definition).

Low-power modes

4.1

Standby

When the device is in Standby, the current consumption is reduced to the level necessary to

perform the memory array refresh operation. The device will enter Standby when a read or

write operation is completed, depending on the operating mode (Asynchronous, NOR-Flash

Synchronous or Full Synchronous).

For details on how to enter Standby, refer to Table 3: Standard Asynchronous Operating

Modes, Table 5: Asynchronous Write Operations (NOR-Flash Synchronous mode) and Table 6:

Synchronous Read Operations (NOR-Flash Synchronous mode).

4.2

Deep Power-Down

Deep Power-Down (DPD) is used by the system memory microcontroller to disable the PSRAM

device when its storage capabilities are not needed. All refresh operations are then disabled.

For the device to enter Deep Power-Down, bit 4 of the RCR must be set to ‘0’ and Chip Enable,

E, must go High, VIH. When the Deep Power-Down is enabled, the data stored in the device

may be corrupted and BCR, RCR and DIDR content are saved.

To exit Deep Power-Down, the Chip Enable signal, E, must be held Low, VIL, for a minimum

time of tEHEL(DP). Bit 4 of the RCR will be automatically set to ‘1’. Once the Deep Power-Down

is exited, the device will be available for normal operations after tVCHEL (time to perform an

initialization sequence) During this delay, the current consumption will be higher than the

specified Standby levels, but considerably lower than the active current. The content of the

registers will be restored after Deep Power-Down.

For details on how to enter Deep Power-Down, refer to Table 3: Standard Asynchronous

Operating Modes, Table 5: Asynchronous Write Operations (NOR-Flash Synchronous mode)

and Table 6: Synchronous Read Operations (NOR-Flash Synchronous mode).

M69KB128AA Datasheet(PDF) 13 Page - STMicroelectronics