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P4C1049-35JM Datasheet(PDF) 4 Page - Pyramid Semiconductor Corporation

No. de pieza P4C1049-35JM
Descripción Electrónicos  HIGH SPEED 512K x 8 STATIC CMOS RAM
PDF  12 Pages
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Fabricante Electrónico  PYRAMID [Pyramid Semiconductor Corporation]
Página de inicio  http://www.pyramidsemiconductor.com
Logo PYRAMID - Pyramid Semiconductor Corporation

P4C1049-35JM Datasheet(HTML) 4 Page - Pyramid Semiconductor Corporation

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P4C1049
Page 4 of 12
Document # SRAM128 REV OR
AC ELECTRICAL CHARACTERISTICS—READ CYCLE
(V
CC = 5V ± 10%, All Temperature Ranges)
(2)
Sym.
t
RC
t
AA
t
AC
t
OH
t
LZ
t
HZ
t
OE
t
OLZ
t
OHZ
t
PU
t
PD
Parameter
Read Cycle Time
Address Access Time
Chip Enable Access Time
Output Hold from Address
Change
Chip Enable to Output in
Low Z
Chip Disable to Output in
High Z
Output Enable Low to Low Z
Output Enable High to High Z
Chip Enable to Power Up
Time
Chip Disable to Power Down
Time
Output Enable Low to Data
Valid
Min
Max
Min
Max
Min
Max
Min
Max
Min
Max
Min
Max
Min
Max
-20
-25
-35
-45
-55
-70
-15
Unit
15
3
3
0
0
15
15
8
7
7
15
20
3
3
0
0
20
20
9
9
9
20
25
3
3
0
0
25
25
11
10
10
25
35
3
3
0
0
35
35
15
15
15
35
45
3
3
0
0
45
45
20
20
20
45
55
3
3
0
0
55
55
25
25
25
55
70
3
3
0
0
70
70
30
30
30
70
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
TIMING WAVEFORM OF READ CYCLE NO. 1 (OE
OE
OE
OE
OE CONTROLLED)(5)



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