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P4C422 Datasheet(PDF) 2 Page - Pyramid Semiconductor Corporation

No. de pieza P4C422
Descripción Electrónicos  HIGH SPEED 256 x 4 STATIC CMOS RAM
PDF  10 Pages
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Fabricante Electrónico  PYRAMID [Pyramid Semiconductor Corporation]
Página de inicio  http://www.pyramidsemiconductor.com
Logo PYRAMID - Pyramid Semiconductor Corporation

P4C422 Datasheet(HTML) 2 Page - Pyramid Semiconductor Corporation

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P4C422
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Document # SRAM101 REV. A
DC ELECTRICAL CHARACTERISTICS
Over recommended operating temperature and supply voltage(2)
P4C422
Min
Max
V
OH
Output High Voltage
I
OH = –5.2 mA, VCC = Min.2.4
V
V
OL
Output Low Voltage
I
OL = +8 mA, VCC = Min.
0.4
V
V
IH
Input High Voltage
2.1
V
V
IL
Input Low Voltage
0.8
V
V
CL
Input Clamp Diode Voltage
I
IN = –10 mA
–1.5
V
I
IX
Input Load Current
GNDV
IN VCC
–10
10
µA
I
OZ
Output Current (High Z)
V
OL VOUT VOH ,
Output Disabled
–10
10
µA
I
OS
Output Short Circuit
V
CC= Max., VOUT = GND
90
mA
Current(3)
Grade(2)
Ambient Temp
Gnd
Vcc
Commercial
0°C to 70°C
0V
5.0V ±10%
Military
–55°C to 125°C
0V
5.0V ±10%
Symbol
Parameter
Test Conditions
Unit
Symbol
Parameter
Conditions Typ. Unit
C
IN
Input Capacitance
V
IN = 0V
5
pF
C
OUT
Output Capacitance V
OUT = 0V
7
pF
CAPACITANCES(4)
(V
CC = 5.0V, TA = 25°C, f = 1.0MHz)
RECOMMENDED OPERATING CONDITIONS
Symbol
Parameter
Value
Unit
T
BIAS
Temperature Under
– 55 to +125
°C
Bias
T
STG
Storage Temperature
– 65 to +150
°C
I
OUT
DC Output Current
20
mA
MAXIMUM RATINGS(1)
Symbol
Parameter
Value
Unit
V
CC
Power Supply Pin with
– 0.5 to +7
V
Respect to GND
Terminal Voltage with
– 0.5 to
V
TERM
Respect to GND
V
CC + 0.5
V
(up to 7.0V)
T
A
Operating Temperature
– 55 to +125
°C
Notes:
1. Stresses greater than those listed under MAXIMUM RATINGS may
cause permanent damage to the device. This is a stress rating only
and functional operation of the device at these or any other conditions
above those indicated in the operational sections of this specification
is not implied. Exposure to MAXIMUM rating conditions for extended
periods may affect reliability.
2. Extended temperature operation guaranteed with 400 linear feet per
minute of air flow.
3. For test purposes, not more than one output at a time should be
shorted. Short circuit test duration should not exceed 30 seconds.
4. This parameter is sampled and not 100% tested.
5. Transition time is
≤ 3ns for 10, 12, and 15 ns products and ≤ 5ns for
20, 25, and 35 ns products, see Fig 1d. Timing is referenced at input
and output levels of 1.5V. The output loading is equivalent to the
specified I
OL/IOH with a load capacitance of 15 pF (10, 12) or 30 pF (15,
20, 25, 35) as in Fig. 1a and 1b respectively.
6. Transition time is
≤ 3ns for 10, 12, and 15 ns products and ≤ 5ns for
20, 25, and 35 ns products, see Fig 1d. Transition is measured at
steady state HIGH level -500mV or steady state LOW level +500mV
on the output from a level on the input with load shown in Fig. 1c.
7. t
W is measured at tWSA = min.; tWSA is measured at tW = min.
POWER DISSIPATION CHARACTERISTICS VS. SPEED
Symbol
I
CC
Parameter
Dynamic Operating Current
Temperature
Range
Commercial
Military
-10
90
N/A
-12
90
N/A
-15
90
90
-20
90
90
-25
65
90
-35
65
90
Unit
mA
mA



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