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C4D10120D Datasheet(PDF) 1 Page - Inchange Semiconductor Company Limited

No. de pieza C4D10120D
Descripción Electrónicos  Silicon Carbide Schottky Diode
PDF  3 Pages
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Fabricante Electrónico  ISC [Inchange Semiconductor Company Limited]
Página de inicio  http://www.iscsemi.cn
Logo ISC - Inchange Semiconductor Company Limited

C4D10120D Datasheet(HTML) 1 Page - Inchange Semiconductor Company Limited

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ISCD7039
eq C4D10120D
Silicon Carbide Schottky Diode
www.iscsemi.com
1
FEATURES
· High-Frequency Operation
· Positive Temperature Coefficient
· Extremely Fast Switching
· No reverse recovery
APPLICATIONS
· AC/DC converters
· Power factor correction
· Switch mode power supply
ABSOLUTE MAXIMUM RATINGS(TC=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VRRM
Repetitisve Peak Reverse Voltage
1200
V
IF
Continuous Forward Current
Tc=25°C
113
A
Tc=135°C
54
IFSM
Non-Repetitive Forward Surge Current
Tc=25°C,Tp=10ms,Half Sine Pulse
130
A
Tc=110°C,Tp=10ms,Half Sine Pulse
110
IFRM
Repetitive Peak Forward Surge Current
Tc=25°C,Tp=10ms,Half Sine Pulse
91
A
Tc=110°C,Tp=10ms,Half Sine Pulse
61
dv/dt
Maximum Rate of Voltage Change
VR= 0-960V
200
V/ns
Ptot
Power Dissipation
Tc=25°C
530
W
Tc=110°C
230
W
TJ
Junction Temperature
-55~175
℃
Tstg
Storage Temperature Range
-55~175
℃


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