2

Electrical characteristics

Table 3. Electrical characteristics (Tamb = 25 °C unless otherwise specified)

Symbol

Parameter

Test conditions

Min.

Max.

Unit

ICBO

Collector-base cut-off current

(IE = 0)

VCB = 60 V

10

nA

VCB = 60 V, Tamb = 150 °C

10

µA

IEBO

Emitter-base cut-off current

(IC = 0)

VEB = 3 V

10

nA

V(BR)CBO

Collector-base breakdown

voltage

(IE = 0)

IC = 100 µA

75

V

V(BR)CEO (1)

Collector-emitter breakdown

voltage

(IB = 0)

IC = 10 mA

50

V

V(BR)EBO

Emitter-base breakdown

voltage

(IC = 0)

IC = 100 µA

6

V

VCE(sat) (1)

Collector-emitter saturation

voltage

IC = 150 mA, IB = 15 mA

0.3

V

VBE(sat) (1)

Base-emitter saturation

voltage

IC = 150 mA, IB = 15 mA

1.2

V

hFE (1)

DC current gain

IC = 0.1 mA, VCE = 10 V

35

IC = 10 mA, VCE = 10 V

75

IC = 150 mA, VCE = 10 V

100

300

IC = 500 mA, VCE = 10 V

40

IC = 10 mA, Tamb = -55 °C, VCE = 10 V

35

hfe

Small signal current gain

IC = 20 mA, f = 100 MHz, VCE = 20 V

2.5

COBO

Output capacitance

(IE = 0)

100 kHz ≤ f ≤ 1 MHz, VCB = 10 V

8

pF

ton

Turn-on time

ICC = 150 mA,

IB1 = 15 mA,

VCC = 30 V

35

ns

toff

Turn-off time

ICC = 150 mA,

IB1 = IB2 = 15 mA,

VCC = 30 V

285

ns

1. Pulsed duration = 300 µs, duty cycle ≤ 1.5%

SOC2222AHR

Electrical characteristics

DS14749 - Rev 1

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