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TDF8541JS/N2 Datasheet(PDF) 32 Page - NXP Semiconductors |
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TDF8541JS/N2 Datasheet(HTML) 32 Page - NXP Semiconductors |
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32 / 54 page ![]() TDF8541 All information provided in this document is subject to legal disclaimers. © NXP B.V. 2011. All rights reserved. Product data sheet Rev. 3 — 13 December 2011 32 of 54 NXP Semiconductors TDF8541 I2C-bus controlled 4 45 W power amplifier [1] 10 k series resistance if connected to V P. [2] Human Body Model (HBM): all pins have passed all tests to 2500 V to guarantee 2000 V, according to class II. [3] Charged-Device Model (CDM). 10. Thermal characteristics 11. Characteristics Vx voltage on pin x SCL and SDA 0 6.5 V SVR, ACGND and DIAG 010 V STB [1] 024 V Ptot total power dissipation Tcase =70 C- 80 W VESD electrostatic discharge voltage HBM; C = 100 pF; Rs =1.5 k [2] - 2000 V CDM [3] corner pins - 750 V non-corner pins; except pin 24 (SVR) version TH only -500 V pin 24 (SVR) version TH only -400 V Table 18. Limiting values …continued In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Conditions Min Max Unit Table 19. Thermal characteristics Symbol Parameter Conditions Typ Unit DBS27/RDBS27/DBSMS27P Rth(j-c) thermal resistance from junction to case 1.15 K/W Rth(j-a) thermal resistance from junction to ambient 40 K/W HSOP36 Rth(j-c) thermal resistance from junction to case 1.15 K/W Rth(j-a) thermal resistance from junction to ambient 35 K/W Table 20. Characteristics Refer to test circuit (see Figure 29) at Tamb =25 C; VP = 14.4 V; unless otherwise specified. Tested at Tamb =25 C; guaranteed for Tj = 40 C to +150 C; functionality is guaranteed for VP < 10 V unless otherwise specified. Symbol Parameter Conditions Min Typ Max Unit Supply voltage behavior VP(oper) operating supply voltage RL = 4 614.4 18 V RL = 2 614.4 16 V Iq quiescent current no load - 260 350 mA no load; VP = 7 V - 190 - mA |
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