RGF1A − RGF1M

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2

SPECIFICATIONS

ABSOLUTE MAXIMUM RATINGS (TA = 25C unless otherwise noted)

Symbol

Parameter

Value

Unit

RGF1A

RGF1B

RGF1D

RGF1G

RGF1J

RGF1K RGF1M

VRRM

Maximum Repetitive Reverse Voltage

50

100

200

400

600

800

1000

V

IF(AV)

Average Rectified Forward Current at

TL = 125C

1.0

A

IFSM

Non−Repetitive Peak Forward Surge

Current: 8.3 ms Single Half−Sine Wave

30

A

TJ

Operating Junction Temperature

−65 to +175

C

TSTG

Storage Temperature Range

−65 to +175

C

Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality

should not be assumed, damage may occur and reliability may be affected.

THERMAL CHARACTERISTICS (TA = 25C unless otherwise noted)

Symbol

Parameter

Value

Unit

PD

Power Dissipation

1.76

W

RqJA

Junction−to−Ambient Thermal Resistance (Note 1)

85

C/W

RqJL

Junction−to−Lead Thermal Resistance (Note 1)

28

C/W

1. Device mounted on FR−4 PCB 0.013 mm.

ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted)

Symbol

Parameter

Conditions

Value

Unit

RGF1A RGF1B RGF1D RGF1G RGF1J RGF1K RGF1M

VF

Maximum Forward Voltage

IF = 1.0 A

1.3

V

trr

Maximum Reverse

Recovery Time

IF = 0.5 A,

IR = 1.0 A,

IRR = 0.25 A

150

250

500

ns

IR

Maximum Reverse Current

at Rated VR

TA = 25C

5.0

mA

TA = 125C

100

CT

Typical Capacitance

VR = 4.0 V,

f = 1.0 MHz

8.5

pF

Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product

performance may not be indicated by the Electrical Characteristics if operated under different conditions.