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APT8014L2LL Datasheet(PDF) 2 Page - Advanced Power Technology

No. de pieza APT8014L2LL
Descripción Electrónicos  Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS.
PDF  5 Pages
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Fabricante Electrónico  ADPOW [Advanced Power Technology]
Página de inicio  http://www.advpowertech.com
Logo ADPOW - Advanced Power Technology

APT8014L2LL Datasheet(HTML) 2 Page - Advanced Power Technology

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DYNAMIC CHARACTERISTICS
APT8014L2LL
Note:
Duty Factor D =
t1/t
2
Peak TJ = PDM x ZθJC + TC
t1
t2
SINGLE PULSE
10-5
10-4
10-3
10-2
10-1
1.0
RECTANGULARPULSEDURATION(SECONDS)
FIGURE 1, MAXIMUM EFFECTIVE TRANSIENT THERMAL IMPEDANCE, JUNCTION-TO-CASE vs PULSE DURATION
0.16
0.14
0.12
0.10
0.08
0.06
0.04
0.02
0
0.5
0.1
0.3
0.7
0.9
0.05
1 Repetitive Rating: Pulse width limited by maximum junction
temperature
2 Pulse Test: Pulse width < 380 µs, Duty Cycle < 2%
3 See MIL-STD-750 Method 3471
4 Starting Tj = +25°C, L = 2.37mH, RG = 25Ω, Peak IL = 52A
5 dv
/dt numbers reflect the limitations of the test circuit rather than the
device itself. I
S ≤
-I
D
52A di
/dt ≤ 700A/µs V
R ≤
800V
T
J ≤
150
°C
6 Eon includes diode reverse recovery. See figures 18, 20.
APT Reserves the right to change, without notice, the specifications and information contained herein.
Characteristic / Test Conditions
Continuous Source Current (Body Diode)
Pulsed Source Current 1 (Body Diode)
Diode Forward Voltage 2 (V
GS
= 0V, I
S
= -I
D
52A
)
Reverse Recovery Time (I
S
= -I
D
52A
, dl
S
/dt = 100A/µs)
Reverse Recovery Charge (I
S
= -I
D
52A
, dl
S
/dt = 100A/µs)
Peak Diode Recovery dv/dt 5
UNIT
Amps
Volts
ns
µC
V/ns
MIN
TYP
MAX
52
208
1.3
930
29
10
Symbol
RθJC
RθJA
MIN
TYP
MAX
0.14
40
UNIT
°C/W
Characteristic
Junction to Case
Junction to Ambient
Symbol
I
S
I
SM
V
SD
t
rr
Q
rr
dv/
dt
Symbol
C
iss
C
oss
C
rss
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
E
on
E
off
E
on
E
off
Characteristic
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge 3
Gate-Source Charge
Gate-Drain ("Miller ") Charge
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Turn-on Switching Energy 6
Turn-off Switching Energy
Turn-on Switching Energy 6
Turn-off Switching Energy
MIN
TYP
MAX
7238
1402
248
285
30
170
20
19
69
15
1091
1135
1662
1383
UNIT
pF
nC
ns
µJ
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS
THERMAL CHARACTERISTICS
Test Conditions
V
GS
= 0V
V
DS
= 25V
f = 1 MHz
V
GS
= 10V
V
DD
= 400V
I
D
= 52A @ 25°C
RESISTIVE SWITCHING
V
GS
= 15V
V
DD
= 400V
I
D
= 52A @ 25°C
R
G
= 0.6
Ω
INDUCTIVE SWITCHING @ 25°C
V
DD
= 533V, V
GS
= 15V
I
D
= 52A, R
G
= 1.7
Ω
INDUCTIVE SWITCHING @ 125°C
V
DD
= 533V, V
GS
= 15V
I
D
= 52A, R
G
= 1.7
Ω



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