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SST39SF040 Datasheet(PDF) 9 Page - Silicon Storage Technology, Inc

No. de pieza SST39SF040
Descripción Electrónicos  1 Mbit / 2 Mbit / 4 Mbit (x8) Multi-Purpose Flash
PDF  24 Pages
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Fabricante Electrónico  SST [Silicon Storage Technology, Inc]
Página de inicio  http://www.sst.com/
Logo SST - Silicon Storage Technology, Inc

SST39SF040 Datasheet(HTML) 9 Page - Silicon Storage Technology, Inc

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Data Sheet
1 Mbit / 2 Mbit / 4 Mbit Multi-Purpose Flash
SST39SF010A / SST39SF020A / SST39SF040
9
©2003 Silicon Storage Technology, Inc.
S71147-06-000
8/04
AC CHARACTERISTICS
TABLE
9: READ CYCLE TIMING PARAMETERS VDD = 4.5-5.5V
Symbol
Parameter
SST39SF010A/020A/040-45
SST39SF010A/020A/040-70
Units
Min
Max
Min
Max
TRC
Read Cycle Time
45
70
ns
TCE
Chip Enable Access Time
45
70
ns
TAA
Address Access Time
45
70
ns
TOE
Output Enable Access Time
25
35
ns
TCLZ1
1. This parameter is measured only for initial qualification and after a design or process change that could affect this parameter.
CE# Low to Active Output
0
0
ns
TOLZ1
OE# Low to Active Output
0
0
ns
TCHZ1
CE# High to High-Z Output
15
25
ns
TOHZ1
OE# High to High-Z Output
15
25
ns
TOH1
Output Hold from Address Change
0
0
ns
T9.4 1147
TABLE 10: PROGRAM/ERASE CYCLE TIMING PARAMETERS
Symbol
Parameter
Min
Max
Units
TBP
Byte-Program Time
20
µs
TAS
Address Setup Time
0
ns
TAH
Address Hold Time
30
ns
TCS
WE# and CE# Setup Time
0
ns
TCH
WE# and CE# Hold Time
0
ns
TOES
OE# High Setup Time
0
ns
TOEH
OE# High Hold Time
10
ns
TCP
CE# Pulse Width
40
ns
TWP
WE# Pulse Width
40
ns
TWPH1
1. This parameter is measured only for initial qualification and after a design or process change that could affect this parameter.
WE# Pulse Width High
30
ns
TCPH1
CE# Pulse Width High
30
ns
TDS
Data Setup Time
40
ns
TDH1
Data Hold Time
0
ns
TIDA1
Software ID Access and Exit Time
150
ns
TSE
Sector-Erase
25
ms
TSCE
Chip-Erase
100
ms
T10.1 1147



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