SFT501 datasheet(2/2 Pages) SSDI

2 / 2 page

Solid State Devices, Inc.

14830 Valley View Blvd * La Mirada, Ca 90638

Phone: (562) 404-7855 * Fax: (562) 404-1773

ssdi@ssdi-power.com * www.ssdi-power.com

SFT501 and SFT503

Series

Electrical Characteristic

Symbol

Min

Typ

Max

Units

Collector – Emitter Breakdown Voltage

IC = 50mA

BVCEO

150

200

––

Volts

Collector – Base Breakdown Voltage

IC = 200µA

BVCBO

200

275

––

Volts

Emitter – Base Breakdown Voltage

IE = 200µA

BVEBO

––

Volts

Collector – Cutoff Current

VCE = 100 V

ICEO

––

1.0

µA

Collector – Cutoff Current

VCB = 100 V

ICBO

––

500

Emitter – Cutoff Current

VEB = 6 V

IEBO

––

500

DC Current Gain *

SFT501

SFT503

VCE = 5V, IC = 50mA

VCE = 5V, IC = 2.5A

VCE = 5V, IC = 5A

VCE = 5V, IC = 50mA

VCE = 5V, IC = 2.5A

VCE = 5V, IC = 5A

hFE

––

Collector – Emitter Saturation Voltage *

IC = 2.5A, IB = 250mA

IC = 5.0A, IB = 500mA

VCE(Sat)

––

0.35

0.6

0.75

1.5

Volts

Base – Emitter Saturation Voltage *

IC = 2.5A, IB = 250mA

IC = 5.0A, IB = 500mA

VBE(Sat)

––

1.0

1.2

1.3

1.5

Volts

Current Gain Bandwidth Product

VCE = 5V, IC = 0.5A, f = 10MHz

––

MHz

Output Capacitance

VCB = 10V, IE = 0A, f = 1MHz

cob

––

130

225

Input Capacitance

VBE = 10V, IC = 0A, f = 1MHz

Cib

––

450

600

Delay Time

––

nsec

Rise Time

––

250

nsec

Storage Time

––

320

600

nsec

Fall Time

VCC = 50V,

IC = 5A,

IB1 = IB2 = 0.5A

––

130

300

nsec

NOTES:

* Pulse Test: Pulse Width = 300µsec, Duty Cycle = 2%

1/ For Ordering Information, Price, and Availability Contact Factory.

2/ Screening per MIL-PRF-19500

3/ For Package Outlines Contact Factory.

4/ Unless Otherwise Specified, All Electrical Characteristics @25ºC.

Available Part Numbers:

SFT501

SFT503

PIN ASSIGNMENT

Package

Pin 1

Pin 2

Pin 3 (Case)

TO-5

Emitter

Base

Collector

SFT501 Datasheet(PDF) 2 Page - Solid States Devices, Inc

SFT501 Datasheet(HTML) 2 Page - Solid States Devices, Inc

Html Pages

1 2

Datasheet Descarga

Enlace URL