Solid State Devices, Inc.

14830 Valley View Blvd * La Mirada, Ca 90638

Phone: (562) 404-7855 * Fax: (562) 404-1773

ssdi@ssdi-power.com * www.ssdi-power.com

DESIGNER’S DATA SHEET

SSR10C 30

S.5 TX

│

│

│

│

│

│

│

│

│

│

│

│

TV = TX Level

TXV= TXV Level

S

= S Level

│

│

│

│

└

G = Cerpack

│

│

└

30 = 300 V

World’s First Silicon Carbide

SSR10C30 Series

10A / 300V

Schottky Silicon Carbide

Features:

• World's 1st Hermetic 10A SiC

• High Voltage 300V

• Very High Operating Temperature, 250ºC

• No Recovery Time (tfr or trr)

• High Current Operation, 10A

• Hermetic Packaging

• TX, TXV, S Level screening available

Maximum Ratings

Symbol

Value

Units

Peak Repetitive and Peak Surge Reverse Voltage

SSR10C20

SSR10C30

200

300

Volts

Average Rectified Forward Current

(Resistive Load, 60 Hz Sine Wave)

Io

10

Amps

Non Repetitive Peak Surge Current

18

Amps

Power Dissipation

15

Watts

Operating & Storage Temperature

Top & Tstg

-55 to +250

ºC

Maximum Thermal Resistance

Junction to Case

4.4

ºC/W

1

Cerpack (G)

SMD .5 (S.5)

NOTE: All specifications are subject to change without notification.

SCD's for these devices should be reviewed by SSDI prior to release.

DATA SHEET #: RS0032B

DOC