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RF3807 Datasheet(PDF) 2 Page - RF Micro Devices

No. de pieza RF3807
Descripción Electrónicos  GaAs HBT PRE-DRIVER AMPLIFIER
PDF  18 Pages
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Fabricante Electrónico  RFMD [RF Micro Devices]
Página de inicio  http://www.rfmd.com
Logo RFMD - RF Micro Devices

RF3807 Datasheet(HTML) 2 Page - RF Micro Devices

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4-624
RF3807
Rev A4 050912
Absolute Maximum Ratings
Parameter
Rating
Unit
Supply Voltage (VCC and VBIAS)9.0
V
Power Control Voltage (VREF)9.0
V
DC Supply Current
250
mA
Maximum Input Power
see below
Output Load VSWR @ P1dB
4:1
Operating Ambient Temperature
-40 to +85
°C
Storage Temperature
-40 to +150
°C
Parameter
Specification
Unit
Condition
Min.
Typ.
Max.
Overall - 450MHz
Frequency
420
480
MHz
IREF=14mA, VCC=8V, VREF=8V, VBIAS=8V,
Temp=+25°C
P1dB
+28.5
+29.0
+29.5
dBm
PIN, Maximum
16
dBm
Total Efficiency
51.0
53.5
55.0
%
@P1dB
Total Power Added Efficiency
50.0
52.5
54.0
%
@P1dB
Gain (S21)
16.0
16.5
17.0
dB
Second Harmonic (2fo)
-21.0
-19.0
-18.5
dBc
@P1dB
Third Harmonic (3fo)
-25.0
-21.0
-20.0
dBc
@P1dB
Input Return Loss (S11)
-15.0
-13.0
-11.0
dB
Output Return Loss (S22)
-8.0
-6.5
-6.0
dB
Two-Tone Specification
OIP3
38.0
40.0
dBm
15dBm/tone
39.5
42.0
dBm
17dBm/tone
41.0
43.5
dBm
19dBm/tone
42.5
44.5
dBm
21dBm/tone
Caution! ESD sensitive device.
RF Micro Devices believes the furnished information is correct and accurate
at the time of this printing. RoHS marking based on EUDirective2002/95/EC
(at time of this printing). However, RF Micro Devices reserves the right to
make changes to its products without notice. RF Micro Devices does not
assume responsibility for the use of the described product(s).



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