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SA7016 Datasheet(PDF) 4 Page - NXP Semiconductors

No. de pieza SA7016
Descripción Electrónicos  1.3GHz low voltage fractional-N synthesizer
PDF  18 Pages
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Fabricante Electrónico  PHILIPS [NXP Semiconductors]
Página de inicio  http://www.nxp.com
Logo PHILIPS - NXP Semiconductors

SA7016 Datasheet(HTML) 4 Page - NXP Semiconductors

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Philips Semiconductors
Product specification
SA7016
1.3GHz low voltage fractional-N synthesizer
1999 Nov 04
4
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
PARAMETER
MIN.
MAX.
UNIT
VDD
Digital supply voltage
–0.3
+5.5
V
VDDCP
Analog supply voltage
–0.3
+5.5
V
∆VDDCP–VDD
Difference in voltage between VDDCP and VDD (VDDCP ≥ VDD)
–0.3
+2.8
V
Vn
Voltage at pins 1, 2, 5, 6, 11 to 16
–0.3
VDD + 0.3
V
V1
Voltage at pin 8, 9
–0.3
VDDCP+ 0.3
V
∆VGND
Difference in voltage between GNDCP and GND (these pins should
be connected together)
–0.3
+0.3
V
Tstg
Storage temperature
–55
+125
_C
Tamb
Operating ambient temperature
–40
+85
_C
Tj
Maximum junction temperature
150
_C
Handling
Inputs and outputs are protected against electrostatic discharge in
normal handling. However, to be totally safe, it is desirable to take
normal precautions appropriate to handling MOS devices.
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
VALUE
UNIT
Rth j–a
Thermal resistance from junction to ambient in free air
120
K/W



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