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2SD2215-252 Datasheet(PDF) 1 Page - Inchange Semiconductor Company Limited |
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2SD2215-252 Datasheet(HTML) 1 Page - Inchange Semiconductor Company Limited |
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1 / 2 page  Silicon NPN Power Transistor 2SD2215 www.iscsemi.com 1 DESCRIPTION · Collector-Emitter Breakdown Voltage- : V(BR)CEO= 250V(Min) · DC Current Gain- : hFE= 70(Min)@ IC= 0.3A APPLICATIONS · DC-DC converter,relay drivers,lamp drivers,motor drivers, inverter ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 350 V VCEO Collector-Emitter Voltage 250 V VEBO Emitter-Base Voltage 5 V IC Collector Current 0.75 A ICP Collector Current (Pulse) 1.5 A PC Collector Power Dissipation @Ta= 25℃ 1.3 W Collector Power Dissipation @TC= 25℃ 15 W TJ Junction Temperature 150 ℃ Tstg Storage Temperature Range -55~150 ℃ |
Número de pieza similar - 2SD2215-252 |
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Descripción similar - 2SD2215-252 |
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