Silicon NPN Power Transistor

2SD2215

www.iscsemi.com

2

ELECTRICAL CHARACTERISTICS （TC=25℃ unless otherwise specified）

SYMBOL

PARAMETER

CONDITIONS

MIN

TYP.

MAX

UNIT

VCE(sat)

Collector-Emitter Saturation Voltage

IC= 1A; IB= 0.2A

--

--

1

V

V(BR)CEO

Collector-Emitter Breakdown

Voltage

IC= 30mA; IB= 0

250

--

--

V

ICEO

Collector Cutoff Current

VCE= 150V; IB= 0

--

--

1

mA

IEBO

Emitter Cutoff Current

VEB= 5V; IC= 0

--

--

1

mA

hFE1

DC Current Gain

IC= 0.3A; VCE= 10V

70

--

250

hFE2

DC Current Gain

IC= 1A; VCE= 10V

10

--

--

Classification of hFE1

Type

Q

P

Range

70-150

120-250

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notification. The information contained herein is presented only as a guide for the applications of our

products.

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