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3CA753-252 Datasheet(PDF) 2 Page - Inchange Semiconductor Company Limited |
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3CA753-252 Datasheet(HTML) 2 Page - Inchange Semiconductor Company Limited |
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2 / 3 page ![]() Silicon PNP Power Transistor 3CA753 www.iscsemi.com 2 ELECTRICAL CHARACTERISTICS (TC=25℃ unless otherwise specified) SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT VCE(sat)-1 Collector-Emitter Saturation Voltage IC= -2A; IB= -200mA -0.8 V VCE(sat)-2 Collector-Emitter Saturation Voltage IC= -1.5A; IB= -30mA -2.0 V V(BR)CBO Collector-Base Breakdown Voltage IC= -100uA; IB= 0 -40 V V(BR)CEO Collector-Emitter Breakdown Voltage IC= -10mA; IB= 0 -30 V V(BR)EBO Emitter-Base Breakdown Voltage IE= -1mA; IC= 0 -5 V ICBO Collector Cutoff Current VCB= -40V; IE= 0 -0.1 μ A IEBO Emitter Cutoff Current VEB= -5V; IC= 0 -0.1 μ A hFE DC Current Gain IC= -0.5A; VCE= -2V 100 400 COB Output Capacitance IE= 0; VCB= -10V; f= 1.0MHz 13 pF fT Current-Gain—Bandwidth Product IC= -500mA; VCE= -5V 120 MHz hFE-1 Classifications O Y G 100-200 160-320 200-400 |
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