2SB1215 datasheet(1/3 Pages) ISC

No. de pieza	2SB1215

Descripción Electrónicos	Silicon PNP Power Transistor

PDF	3 Pages

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Fabricante Electrónico	ISC [Inchange Semiconductor Company Limited]

Página de inicio	http://www.iscsemi.cn

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Silicon PNP Power Transistor

2SB1215

www.iscsemi.com

1

DESCRIPTION

·

Excellent linearity of hFE

·

Low collector-to-emitter saturation voltage

·

Fast switching speed

APPLICATIONS

·

Relay drivers,High speed inverters,converters and other

general high-current switching applications

ABSOLUTE MAXIMUM RATINGS(Ta=25℃)

SYMBOL

PARAMETER

VALUE

UNIT

VCBO

Collector-Base Voltage

-120

V

VCEO

Collector-Emitter Voltage

-100

V

VEBO

Emitter-Base Voltage

-6

V

IC

Collector Current-Continuous

-3

A

ICP

Collector Current-Pulse

-6

A

PC

Collector Power Dissipation

@ TC=25℃

20

W

Collector Power Dissipation

@ Ta=25℃

1.0

W

TJ

Junction Temperature

150

℃

Tstg

Storage Temperature Range

-55~150

℃

2

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2SB1215 Datasheet(PDF) 1 Page - Inchange Semiconductor Company Limited

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