PBYR6045WT datasheet(3/5 Pages) PHILIPS

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Philips Semiconductors

Product specification

Rectifier diodes

PBYR6045WT series

Schottky barrier

Fig.1. Maximum forward dissipation P

F = f(IF(AV)) per

diode; square current waveform where

F(AV) =IF(RMS) x √D.

Fig.2. Maximum forward dissipation P

F = f(IF(AV)) per

diode; sinusoidal current waveform where a = form

factor = I

F(RMS) / IF(AV).

Fig.3. Typical and maximum forward characteristic

F = f(VF); parameter Tj

Fig.4. Typical reverse leakage current per diode;

R = f(VR); parameter Tj

Fig.5. Typical junction capacitance per diode;

d = f(VR); f = 1 MHz; Tj = 25˚C to 125 ˚C.

Fig.6. Transient thermal impedance per diode;

th j-mb = f(tp).

PBYR6045WT

1020

3040

Average forward current, IF(AV) (A)

Forward dissipation, PF (W)

Tmb(max) (C)

150

D = 1.0

0.5

0.2

0.1

145

135

130

125

D = tp/T

140

120

Reverse Current, IR (mA)

PBYR6045WT

0.01

0.1

100

1000

1020

304050

Reverse Voltage, VR (V)

Tj =25C

Tj =75C

Tj =50C

Tj =100C

Tj =125C

PBYR6045WT

Average forward current, IF(AV) (A)

Forward dissipation, PF (W)

Tmb(max) (C)

150

a = 1.57

1.9

2.2

2.8

145

140

135

125

130

PBYR6045WT

100

1000

10000

100

VR / V

Cd / pF

PBYR6045WT

0.1

0.2

0.3

0.4

0.5

0.6

0.7

0.8

0.9

Forward Voltage, VF (V)

Forward Current, IF (A)

Tj = 25 C

Tj =125 C

typ

max

PBYR6045WT

0.001

0.01

0.1

1E-06

1E-05

1E-04

1E-03

1E-02

1E-01

1E+00

1E+01

pulse width, tp (s)

Transient Thermal Impedance, Zth j-mb (K/W)

Single pulse

December 1998

Rev 1.000

PBYR6045WT Datasheet(PDF) 3 Page - NXP Semiconductors

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