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PBYR4025WT Datasheet(PDF) 2 Page - NXP Semiconductors

No. de pieza PBYR4025WT
Descripción Electrónicos  Rectifier diodes schottky barrier
PDF  5 Pages
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Fabricante Electrónico  PHILIPS [NXP Semiconductors]
Página de inicio  http://www.nxp.com
Logo PHILIPS - NXP Semiconductors

PBYR4025WT Datasheet(HTML) 2 Page - NXP Semiconductors

  PBYR4025WT Datasheet HTML 1Page - NXP Semiconductors PBYR4025WT Datasheet HTML 2Page - NXP Semiconductors PBYR4025WT Datasheet HTML 3Page - NXP Semiconductors PBYR4025WT Datasheet HTML 4Page - NXP Semiconductors PBYR4025WT Datasheet HTML 5Page - NXP Semiconductors  
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Philips Semiconductors
Product specification
Rectifier diodes
PBYR4025WT series
schottky barrier
STATIC CHARACTERISTICS
T
j = 25 ˚C unless otherwise stated
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
V
F
Forward voltage (per diode)
I
F = 20 A; Tj = 125˚C
-
0.40
0.46
V
I
F = 40 A; Tj = 125˚C
-
0.50
0.54
V
I
F = 40 A
-
0.60
0.64
V
I
R
Reverse current (per diode)
V
R = VRRM
-
2.0
10
mA
V
R = VRRM; Tj = 100 ˚C
-
30
80
mA
C
d
Junction capacitance (per
f = 1MHz; V
R = 5V; Tj = 25 ˚C to
-
900
-
pF
diode)
125 ˚C
Fig.1. Maximum forward dissipation P
F = f(IF(AV)) per
diode; square current waveform where
I
F(AV) =IF(RMS) x √D.
Fig.2. Typical and maximum forward characteristic
I
F = f(VF); parameter Tj
Fig.3. Typical reverse leakage current per diode;
I
R = f(VR); parameter Tj
Fig.4. Typical junction capacitance per diode;
C
d = f(VR); f = 1 MHz; Tj = 25˚C to 125 ˚C.
0
5
10
15
20
25
30
0
5
10
15
D = 1.0
0.5
0.2
0.1
PBYR4025WT
Rs = 0.004 Ohms
Vo = 0.38 V
150
IF(AV) / A
PF / W
Tmb(max) / C
142.5
135
127.5
T
I
D =
tp
tp
T
t
0
5
10
15
20
25
1uA
10uA
100uA
1mA
10mA
100mA
1A
PBYR1625
VR / V
IR / A
Tj = 25 C
50 C
75 C
100 C
125 C
150 C
0
0.2
0.4
0.6
0.8
1
0
10
20
30
40
50
PBYR1625
VF / V
IF / A
Tj = 25 C
Tj = 125 C
max
typ
1
10
100
100
1000
10000
PBYR1625
VR / V
Cd / pF
November 1998
2
Rev 1.100



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