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PBYR3035PTF Datasheet(PDF) 2 Page - NXP Semiconductors

No. de pieza PBYR3035PTF
Descripción Electrónicos  Rectifier diodes schottky barrier
PDF  5 Pages
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Fabricante Electrónico  PHILIPS [NXP Semiconductors]
Página de inicio  http://www.nxp.com
Logo PHILIPS - NXP Semiconductors

PBYR3035PTF Datasheet(HTML) 2 Page - NXP Semiconductors

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Philips Semiconductors
Product specification
Rectifier diodes
PBYR3045PTF series
schottky barrier
ISOLATION LIMITING VALUE & CHARACTERISTIC
T
hs = 25 ˚C unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
V
isol
Repetitive peak voltage from all
R.H.
≤ 65 % ; clean and dustfree
-
2500
V
three terminals to external
heatsink
C
isol
Capacitance from T2 to external f = 1 MHz
-
22
-
pF
heatsink
THERMAL RESISTANCES
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
R
th j-hs
Thermal resistance junction to
per diode
-
-
4.0
K/W
heatsink
both diodes
-
-
3.5
K/W
(with heatsink compound)
R
th j-a
Thermal resistance junction to
in free air.
-
35
-
K/W
ambient
STATIC CHARACTERISTICS
T
j = 25 ˚C unless otherwise stated
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
V
F
Forward voltage (per diode)
I
F = 30 A; Tj = 125˚C
-
0.70
0.75
V
I
F = 20 A; Tj = 125˚C
-
0.58
0.65
V
I
F = 30 A
-
0.75
0.80
V
I
R
Reverse current (per diode)
V
R = VRWM
-
100
200
µA
V
R = VRWM; Tj = 125 ˚C
-
12
40
mA
C
d
Junction capacitance (per
f = 1MHz; V
R = 5V; Tj = 25 ˚C to
-
800
-
pF
diode)
125 ˚C
August 1996
2
Rev 1.100



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