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PBYR3035PT Datasheet(PDF) 1 Page - NXP Semiconductors |
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PBYR3035PT Datasheet(HTML) 1 Page - NXP Semiconductors |
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1 / 5 page ![]() Philips Semiconductors Product specification Rectifier diodes PBYR3045PT series schottky barrier GENERAL DESCRIPTION QUICK REFERENCE DATA Dual, low leakage, platinum barrier, SYMBOL PARAMETER MAX. MAX. MAX. UNIT schottky rectifier diodes in a plastic envelope featuring low forward PBYR30- 35PT 40PT 45PT voltage drop and absence of stored V RRM Repetitive peak reverse 35 40 45 V charge. These devices can withstand voltage reverse voltage transients and have V F Forward voltage 0.60 0.60 0.60 V guaranteed reverse surge capability. I O(AV) Output current (both 30 30 30 A The devices are intended for use in diodes conducting) switched mode power supplies and high frequency circuits in general where low conduction and zero switching losses are important. PINNING - SOT93 PIN CONFIGURATION SYMBOL PIN DESCRIPTION 1 Anode 1 (a) 2 Cathode (k) 3 Anode 2 (a) tab Cathode (k) LIMITING VALUES Limiting values in accordance with the Absolute Maximum System (IEC 134). SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT -35 -40 -45 V RRM Repetitive peak reverse voltage - 35 40 45 V V RWM Crest working reverse voltage - 35 40 45 V V R Continuous reverse voltage T mb ≤ 136 ˚C - 35 40 45 V I O(AV) Output current (both diodes square wave; δ = 0.5; - 30 A conducting) 1 T mb ≤ 130 ˚C I O(RMS) RMS forward current - 43 A I FRM Repetitive peak forward current t = 25 µs; δ = 0.5; - 30 A per diode T mb ≤ 130 ˚C I FSM Non-repetitive peak forward t = 10 ms - 180 A current per diode t = 8.3 ms - 200 A sinusoidal T j = 125 ˚C prior to surge; with reapplied V RWM(max) I 2tI2t for fusing t = 10 ms - 162 A 2s I RRM Repetitive peak reverse current t p = 2 µs; δ = 0.001 - 2 A per diode. I RSM Non-repetitive peak reverse t p = 100 µs- 2 A current per diode. T stg Storage temperature -65 175 ˚C T j Operating junction temperature - 150 ˚C 123 tab k a1 a2 1 2 3 1 For output currents in excess of 20 A connection should be made to the exposed metal mounting base. August 1996 1 Rev 1.100 |
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