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PBYR30100PT Datasheet(PDF) 1 Page - NXP Semiconductors

No. de pieza PBYR30100PT
Descripción Electrónicos  Rectifier diodes schottky barrier
PDF  5 Pages
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Fabricante Electrónico  PHILIPS [NXP Semiconductors]
Página de inicio  http://www.nxp.com
Logo PHILIPS - NXP Semiconductors

PBYR30100PT Datasheet(HTML) 1 Page - NXP Semiconductors

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Philips Semiconductors
Product specification
Rectifier diodes
PBYR30100PT series
schottky barrier
GENERAL DESCRIPTION
QUICK REFERENCE DATA
Dual, low leakage, platinum barrier
SYMBOL
PARAMETER
MAX.
MAX.
MAX.
UNIT
schottky rectifier diodes in a plastic
envelope
featuring
low
forward
PBYR30-
60PT
80PT
100PT
voltage drop and absence of stored
V
RRM
Repetitive peak reverse
60
80
100
V
charge. These devices can withstand
voltage
reverse voltage transients and have
V
F
Forward voltage
0.7
0.7
0.7
V
guaranteed reverse surge capability.
I
O(AV)
Output current (both
30
30
30
A
The devices are intended for use in
diodes conducting)
switched mode power supplies and
high frequency circuits in general
where low conduction and zero
switching losses are important.
PINNING - SOT93
PIN CONFIGURATION
SYMBOL
PIN
DESCRIPTION
1
Anode 1 (a)
2
Cathode (k)
3
Anode 2 (a)
tab
Cathode (k)
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134).
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
-60
-80
-100
V
RRM
Repetitive peak reverse voltage
-
60
80
100
V
V
RWM
Crest working reverse voltage
-
60
80
100
V
V
R
Continuous reverse voltage
T
mb ≤ 139 ˚C
-
60
80
100
V
I
O(AV)
Output current (both diodes
square wave;
δ = 0.5;
-
30
A
conducting)
1
T
mb ≤ 124 ˚C
I
O(RMS)
RMS forward current
-
43
A
I
FRM
Repetitive peak forward current t = 25
µs; δ = 0.5;
-
30
A
per diode
T
mb ≤ 124 ˚C
I
FSM
Non-repetitive peak forward
t = 10 ms
-
180
A
current per diode.
t = 8.3 ms
-
200
A
sinusoidal; T
j = 125 ˚C prior
to surge; with reapplied
V
RWM(max)
I
2t
I
2t for fusing
t = 10 ms
-
162
A
2s
I
RRM
Repetitive peak reverse current t
p = 2 µs; δ = 0.001
-
1
A
per diode.
I
RSM
Non-repetitive peak reverse
t
p = 100 µs
-
1
A
current per diode.
T
stg
Storage temperature
-65
175
˚C
T
j
Operating junction temperature
-
150
˚C
1
2
3
tab
k
a1
a2
1 For output currents in excess of 20 A connection should be made to the exposed metal mounting base.
October 1994
1
Rev 1.100


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