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PBYR2545CTB Datasheet(PDF) 1 Page - NXP Semiconductors |
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PBYR2545CTB Datasheet(HTML) 1 Page - NXP Semiconductors |
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1 / 6 page ![]() Philips Semiconductors Product specification Rectifier diodes PBYR2545CT, PBYR2545CTB series Schottky barrier FEATURES SYMBOL QUICK REFERENCE DATA • Low forward volt drop V R = 40 V/ 45 V • Fast switching • Reverse surge capability I O(AV) = 30 A • High thermal cycling performance • Low thermal resistance V F ≤ 0.62 V GENERAL DESCRIPTION Dual, common cathode schottky rectifier diodes in a conventional leaded plastic package and a surface mounting plastic package. Intended for use as output rectifiers in low voltage, high frequency switched mode power supplies. The PBYR2545CT series is supplied in the SOT78 conventional leaded package. The PBYR2545CTB series is supplied in the SOT404 surface mounting package. PINNING SOT78 (TO220AB) SOT404 PIN DESCRIPTION 1 anode 1 (a) 2 cathode (k) 1 3 anode 2 (a) tab cathode (k) LIMITING VALUES Limiting values in accordance with the Absolute Maximum System (IEC 134) SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT PBYR25 40CT 45CT PBYR25 40CTB 45CTB V RRM Peak repetitive reverse - 40 45 V voltage V RWM Working peak reverse - 40 45 V voltage V R Continuous reverse voltage T mb ≤ 113 ˚C - 40 45 V I O(AV) Average rectified forward square wave; δ = 0.5; - 30 A current (both diodes T mb ≤ 126 ˚C conducting) 2 I FRM Repetitive peak forward square wave; δ = 0.5; - 30 A current per diode T mb ≤ 126 ˚C I FSM Non-repetitive peak forward t = 10 ms - 180 A current per diode t = 8.3 ms - 200 A sinusoidal; T j = 125 ˚C prior to surge; with reapplied V RRM(max) I RRM Peak repetitive reverse pulse width and repetition rate - 1 A surge current per diode limited by T j max T j Operating junction - 150 ˚C temperature T stg Storage temperature - 65 175 ˚C 1. It is not possible to make connection to pin 2 of the SOT404 package. 2. SOT78 package. For output currents greater than 20A the cathode connection should be made to the metal mounting tab. k a1 a2 13 2 13 tab 2 12 3 tab October 1998 1 Rev 1.400 |
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