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PBYR2520CT Datasheet(PDF) 3 Page - NXP Semiconductors

No. de pieza PBYR2520CT
Descripción Electrónicos  Rectifier diodes schottky barrier
PDF  5 Pages
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Fabricante Electrónico  PHILIPS [NXP Semiconductors]
Página de inicio  http://www.nxp.com
Logo PHILIPS - NXP Semiconductors

PBYR2520CT Datasheet(HTML) 3 Page - NXP Semiconductors

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Philips Semiconductors
Product specification
Rectifier diodes
PBYR2525CT series
schottky barrier
Fig.1. Maximum forward dissipation P
F = f(IF(AV)) per
diode; square current waveform where
I
F(AV) =IF(RMS) x √D.
Fig.2. Typical and maximum forward characteristic
I
F = f(VF); parameter Tj
Fig.3. Typical reverse leakage current per diode;
I
R = f(VR); parameter Tj
Fig.4. Typical junction capacitance per diode;
C
d = f(VR); f = 1 MHz; Tj = 25˚C to 125 ˚C.
Fig.5. Transient thermal impedance per diode;
Z
th j-mb = f(tp).
0
5
10
15
20
25
0
2
4
6
8
10
12
D = 1.0
0.5
0.2
0.1
PBYR1625
Rs = 0.00875 Ohms
Vo = 0.27 V
150
147
144
141
138
135
132
IF(AV) / A
PF / W
Tmb(max) / C
T
I
D =
tp
tp
T
t
1
10
100
100
1000
10000
PBYR1625
VR / V
Cd / pF
0
0.2
0.4
0.6
0.8
1
0
10
20
30
40
50
PBYR1625
VF / V
IF / A
Tj = 25 C
Tj = 125 C
max
typ
10
1
0.1
0.01
10us
1ms
0.1s
10s
tp / s
Zth j-mb (K/W)
P
tp
t
D
0
5
10
15
20
25
1uA
10uA
100uA
1mA
10mA
100mA
1A
PBYR1625
VR / V
IR / A
Tj = 25 C
50 C
75 C
100 C
125 C
150 C
January 1997
3
Rev 1.000



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