Philips Semiconductors

Product specification

Rectifier diodes

PBYR225CT series

Schottky barrier

ELECTRICAL CHARACTERISTICS

characteristics are per diode at T

SYMBOL PARAMETER

CONDITIONS

MIN.

TYP. MAX. UNIT

V

F

Forward voltage

I

-

0.28

0.33

V

I

-

0.42

0.51

V

I

R

Reverse current

V

-

0.05

3

mA

V

-

5

10

mA

C

d

Junction capacitance

V

-

160

-

pF

PRINTED CIRCUIT BOARD

Dimensions in mm.

Fig.1. PCB for thermal resistance and power rating for SOT223.

PCB: FR4 epoxy glass (1.6 mm thick), copper laminate (35

µm thick).

36

60

9

10

4.6

18

4.5

7

15

50

March 1998

2

Rev 1.100