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FS100R17N3E4 Datasheet(PDF) 2 Page - Inchange Semiconductor Company Limited

No. de pieza FS100R17N3E4
Descripción Electrónicos  IGBT Modules
PDF  5 Pages
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Fabricante Electrónico  ISC [Inchange Semiconductor Company Limited]
Página de inicio  http://www.iscsemi.cn
Logo ISC - Inchange Semiconductor Company Limited

FS100R17N3E4 Datasheet(HTML) 2 Page - Inchange Semiconductor Company Limited

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ISGM2048
eq FS100R17N3E4
IGBT Modules
www.iscsemi.com
2
QG
Gate Charge
VGE= +15V...-15V
-
1.20
-
nC
RG
Internalgateresistor
7.5
Ω
TJ
Operating Junction Temperature
-40
-
150
℃
ISC
SC Data
VCC=1000V, VGE≤ 15V,
tp≤ 10us,TJ= 150℃
-
450
-
A
SWITCHING CHARACTERISTICS(TC=25℃ unless otherwise specified)
SYMBOL
PARAMETER
CONDITIONS
MIN
TYP
MAX
UNIT
td(on)
Turn-on Delay Time
VGE = ±15V
IC= 100A
VCE = 600V
RG= 4.7Ω
TJ= 25℃
L = 100 nH
-
210
-
ns
tr
Turn-on Rise Time
-
33
-
td(off)
Turn-off Delay Time
-
513
-
tf
Turn-off Fall Time
-
295
-
Eon
Turn-on switching losses
-
13
-
mJ
Eoff
Turn-off switching losses
-
17
-
DIODE, INVERTER
MAXIMUM RATED VALUES (TC=25℃ unless otherwise specified)
SYMBOL
PARAMETER
VALUE
UNIT
VRRM
Repetitive Peak Reverse Voltage
1700
V
IF
Diode Continuous Forward Current
100
A
IFRM
Repetitive Peak Forward Current @tp = 1 ms
200
A
I²t
I²t-value
VR = 0 V, tP = 10 ms, Tvj = 125°C
1800
A²s
VR = 0 V, tP = 10 ms, Tvj = 150°C
1750
ELECTRICAL CHARACTERIS
SYMBOL
PARAMETER
CONDITIONS
MIN
TYP
MAX
UNIT
VF
Diode Forward Voltage
IF= 100A, TC=125℃
2.10
V
IRM
Peak
Reverse
recovery
current
VR= 600V, IF= 100A,
-diF/dt=4400A/us,
VGE = 15 V
TJ= 25℃
1
A
Qrr
Reverse Recovery Charge
17
uC
Err
Reverse Recovery Energy
10
mJ



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