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PBYL3020CTB Datasheet(PDF) 2 Page - NXP Semiconductors

No. de pieza PBYL3020CTB
Descripción Electrónicos  Rectifier diodes Schottky barrier
PDF  6 Pages
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Fabricante Electrónico  PHILIPS [NXP Semiconductors]
Página de inicio  http://www.nxp.com
Logo PHILIPS - NXP Semiconductors

PBYL3020CTB Datasheet(HTML) 2 Page - NXP Semiconductors

  PBYL3020CTB Datasheet HTML 1Page - NXP Semiconductors PBYL3020CTB Datasheet HTML 2Page - NXP Semiconductors PBYL3020CTB Datasheet HTML 3Page - NXP Semiconductors PBYL3020CTB Datasheet HTML 4Page - NXP Semiconductors PBYL3020CTB Datasheet HTML 5Page - NXP Semiconductors PBYL3020CTB Datasheet HTML 6Page - NXP Semiconductors  
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Philips Semiconductors
Product specification
Rectifier diodes
PBYL3025CT, PBYL3025CTB series
Schottky barrier
THERMAL RESISTANCES
SYMBOL PARAMETER
CONDITIONS
MIN.
TYP. MAX. UNIT
R
th j-mb
Thermal resistance junction
per diode
-
-
2
K/W
to mounting base
both diodes
-
-
1.5
K/W
R
th j-a
Thermal resistance junction
SOT78 package, in free air
-
60
-
K/W
to ambient
SOT404 package, pcb mounted, minimum
-
50
-
K/W
footprint, FR4 board
ELECTRICAL CHARACTERISTICS
All characteristics are per diode at T
j = 25 ˚C unless otherwise specified
SYMBOL PARAMETER
CONDITIONS
MIN.
TYP. MAX. UNIT
V
F
Forward voltage
I
F = 15 A; Tj = 150˚C
-
0.35
0.43
V
I
F = 15 A; Tj = 125˚C
-
0.38
0.46
V
I
F = 30 A; Tj = 125˚C
-
0.52
0.6
V
I
F = 30 A
-
0.6
0.67
V
I
R
Reverse current
V
R = VRWM
-1
5
mA
V
R = VRWM; Tj = 100˚C
-
22
40
mA
C
d
Junction capacitance
V
R = 5 V; f = 1 MHz, Tj = 25˚C to 125˚C
-
700
-
pF
March 1998
2
Rev 1.000



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